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Dry and Wet Etching
We offer Reactive Ion Etching (RIE), Inductively Coupled Plasma (ICP) mode, and wet etching.
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Features:
- Process Gases Available: SF6, Cl2, CF4, BCl3, O2, Ar, He, N2
- Wafer Clamping and liquid nitrogen backside cooling
- 4" wafer capable.
- Temperature controlled chamber
- 2KW ICP, 600W RIE
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